Umgaqo wokwenza i-graphitization ubandakanya unyango lobushushu obuphezulu (2300–3000°C), nto leyo ebangela ukuhlelwa kwakhona kwee-atoms ze-carbon ezi-amorphous, eziphazamisekileyo zibe yi-thermodynamically stable three-dimensional ordered crystal structure. Ingongoma yale nkqubo ikwindawo yokwakha kwakhona i-hexagonal lattice ngokusebenzisa i-SP² hybridization yee-atoms ze-carbon, ezinokwahlulwa zibe ngamanqanaba amathathu:
Inqanaba Lokukhula Kwe-Microcrystalline (1000–1800°C):
Ngaphakathi kolu luhlu lobushushu, ukungcola kwizinto zekhabhoni (ezifana neentsimbi ezincibilikayo, isalfure, kunye ne-phosphorus) kuqala ukufuma nokuwohloka, ngelixa ulwakhiwo olucwangcisiweyo lweeleya zekhabhoni lukhula kancinci kancinci. Ukuphakama kwee-microcrystals kuyanda ukusuka kwi-~1 nanometer yokuqala ukuya kwi-10 nanometers, okubeka isiseko sokucwangciswa okulandelayo.
Inqanaba lokuLawula elinemilinganiselo emithathu (1800–2500°C):
Njengoko ubushushu bunyuka, ukungalungelelani phakathi kwee-carbon layers kuyancipha, kwaye isithuba se-interlayer sincipha kancinci kancinci siye kwi-0.343–0.346 nanometers (sisondela kwixabiso elifanelekileyo le-graphite le-0.335 nanometers). I-graphitization degree iyanda ukusuka kwi-0 ukuya kwi-0.9, kwaye izinto ziqala ukubonisa iimpawu ze-graphite ezahlukileyo, ezifana nokuqhuba kombane kunye nobushushu okuphuculweyo kakhulu.
Inqanaba lokugqibelela kwekristale (2500–3000°C):
Kumaqondo obushushu aphezulu, ii-microcrystals ziyahlengahlengiswa, kwaye iziphene ze-lattice (ezifana nezithuba kunye nokudilika) ziyalungiswa ngokuthe ngcembe, kunye ne-graphitization degree esondela kwi-1.0 (i-crystal efanelekileyo). Kule ndawo, i-resistivity yombane yezixhobo inokuncipha ngamaxesha ama-4-5, i-thermal conductivity iphucuka malunga namaxesha ali-10, i-coefficient of linear expansion yehla ngama-50-80%, kwaye uzinzo lweekhemikhali luphucuka kakhulu.
Igalelo lamandla obushushu obuphezulu yeyona nto iphambili eqhuba i-graphitization, ukoyisa umqobo wamandla wokulungiswa kwakhona kwe-athomu yekhabhoni kwaye kuvumela utshintsho ukusuka kwindawo engalungelelaniswanga ukuya kwisakhiwo esicwangcisiweyo. Ukongeza, ukongezwa kwee-catalysts (ezifana ne-boron, i-iron, okanye i-ferrosilicon) kunokunciphisa ubushushu be-graphitization kwaye kukhuthaze ukusasazeka kwe-athomu yekhabhoni kunye nokwakheka kwe-lattice. Umzekelo, xa i-ferrosilicon ine-25% ye-silicon, ubushushu be-graphitization bunokunciphisa ukusuka kwi-2500–3000°C ukuya kwi-1500°C, ngelixa kuveliswa i-silicon carbide ene-hexagonal ukunceda ekwakhiweni kwe-graphite.
Ixabiso lokusetyenziswa kwe-graphitization libonakala ekuphuculeni ngokupheleleyo iipropati zezinto eziphathekayo:
- Ukuqhuba kombane: Emva kokwenza i-graphitization, ukumelana kombane kwezinto kuncipha kakhulu, nto leyo eyenza ukuba ibe yeyona nto ingenasinyithi enokuqhuba kombane okugqwesileyo.
- Ukuqhuba Ubushushu: Ukuqhuba Ubushushu kuphucuka malunga nezihlandlo ezili-10, nto leyo eyenza ukuba ifaneleke ukusetyenziswa kulawulo lobushushu.
- Uzinzo lweeKhemikhali: Ukumelana ne-oxidation kunye nokumelana nokugqwala kuyaphuculwa, nto leyo eyandisa ubomi benkonzo yesixhobo.
- Iimpawu zoomatshini: Nangona amandla engase anciphe, ulwakhiwo lwemingxuma lungaphuculwa ngokufaka i-impregnation, ukwanda koxinano kunye nokumelana nokuguguleka.
- Ukuphucula Ubunyulu: Ukungcola kuyawohloka xa kushushu kakhulu, kunciphisa umxholo wothuthu lwemveliso ngokuphindwe kayi-300 kwaye kuhlangabezana neemfuno zobunyulu obuphezulu.
Umzekelo, kwizinto ze-anode zebhetri ye-lithium-ion, i-graphitization linyathelo eliphambili ekulungiseleleni ii-anode ze-graphite zokwenziwa. Ngokusebenzisa unyango lwe-graphitization, uxinano lwamandla, uzinzo lomjikelo, kunye nokusebenza kwesantya sezinto ze-anode ziphucuka kakhulu, nto leyo echaphazela ngokuthe ngqo ukusebenza kwebhetri iyonke. Ezinye ii-graphite zendalo zikwaphathwa ngobushushu obuphezulu ukuze ziphucule ngakumbi inqanaba lazo le-graphitization, ngaloo ndlela ziphucula uxinano lwamandla kunye nokusebenza kakuhle kokukhupha itshaja.
Ixesha leposi: Sep-09-2025