Unyango lwe-graphitization ludla ngokufuna amaqondo obushushu aphezulu aqala kwi-2300 ukuya kwi-3000℃, umgaqo-siseko wayo kukuguqulwa kwee-athomu zekhabhoni ukusuka kulungiselelo oluphazamisekileyo ukuya kwisakhiwo sekristale ye-graphite ecwangcisiweyo ngokusebenzisa unyango lobushushu obuphezulu. Apha ngezantsi kukho uhlalutyo oluneenkcukacha:
I. Uluhlu lobushushu loNyango lweGraphitization oluQhelekileyo
A. Iimfuno zoBushushu eziSisiseko
Ukwenziwa kwegraphitization yesiqhelo kufuna ukunyusa ubushushu bufikelele kububanzi obuphakathi kwama-2300 ukuya kuma-3000℃, apho:
- I-2500℃ iphawula indawo ephambili yokujika, apho isithuba phakathi kwee-athomu zekhabhoni sincipha kakhulu, kwaye inqanaba le-graphitization likhula ngokukhawuleza;
- Ngaphaya kwe-3000℃, utshintsho luya luhamba kancinci kancinci, kwaye ikristale yegrafiti isondela ekugqibeleleni, nangona ubushushu obungakumbi bunyusa isivuno nto leyo enciphisa ukuphucuka okuncinci ekusebenzeni.
B. Impembelelo yoMmahluko weZinto kwiBushushu
- Iikhabhoni ezilula ukuzisebenzisa (umz., i-petroleum coke): Zingena kwinqanaba lokusebenzisa i-graphitization kwi-1700℃, kunye nokwanda okuphawulekayo kwinqanaba lokusebenzisa i-graphitization kwi-2500℃;
- Iikhabhoni ezilukhuni ukuzisebenzisa (umz., i-anthracite): Zifuna amaqondo obushushu aphezulu (afikelela kwi-3000℃) ukuze kufezekiswe utshintsho olufanayo.
II. Indlela Amaqondo Obushushu Aphezulu Asebenzisa Ngayo Ukukhuthaza Ukulandelelana Kweeathom Zekhabhoni
A. Isigaba 1 (1000–1800℃): Ukukhutshwa komoya oguquguqukayo kunye nokucwangciswa kokukhanya okunemilinganiselo emibini
- Iitsheyini ze-aliphatic, iibhondi ze-CH, kunye ne-C=O ziyaqhekeka, zikhupha i-hydrogen, i-oxygen, i-nitrogen, i-sulfur, kunye nezinye izinto ngendlela yee-monomers okanye iimolekyuli ezilula (umz., i-CH₄, i-CO₂);
- Iileya zeathom zekhabhoni ziyanda ngaphakathi kweplane enemilinganiselo emibini, apho ukuphakama kwe-microcrystalline kukhula ukusuka kwi-1 nm ukuya kwi-10 nm, ngelixa ukuqiniswa kweeleya eziphakathi kungatshintshi kangako;
- Zombini iinkqubo ze-endothermic (iimpendulo zeekhemikhali) kunye ne-exothermic (iinkqubo zomzimba, ezinje ngokukhululwa kwamandla e-interfacial ukusuka ekunyamalaleni komda we-microcrystalline) zenzeka ngaxeshanye.
B. Isigaba sesi-2 (1800–2400℃): Uku-odola okunemilinganiselo emithathu kunye nokulungiswa kwemida yeenkozo
- Ukwanda kwamaza okushukuma kobushushu beeathom zekhabhoni kuziqhubela ekubeni zitshintshele kwizicwangciso ezintathu, ezilawulwa ngumgaqo wamandla amancinci asimahla;
- Ukudilika kunye nemida yeenkozo kwiiplani zekristale kuyanyamalala kancinci kancinci, okubonakala ngokuvela kwemigca ebukhali (hko) kunye ne (001) kwi-X-ray diffraction spectra, okuqinisekisa ukwakheka kolungelelwaniso olucwangcisiweyo olunemilinganiselo emithathu;
- Ezinye izinto ezingcolisayo zenza ii-carbides (umz., i-silicon carbide), ezibola zibe ngumphunga wesinyithi kunye ne-graphite kumaqondo obushushu aphezulu.
C. Isigaba sesi-3 (Ngaphezulu kwama-2400℃): Ukukhula kweenkozo kunye nokuPhinda kusetyenziswe kwakhona
- Ubukhulu beenkozo buyanda ecaleni kwe-a-axis ukuya kumyinge we-10–150 nm kwaye ecaleni kwe-c-axis ukuya kutsho kumaleko angama-60 (malunga nama-20 nm);
- Iiathom zekhabhoni ziphuculwa nge-lattice ngokufuduka kwangaphakathi okanye phakathi kweemolekyuli, ngelixa izinga lokuphuma komphunga kwezinto zekhabhoni lisanda ngokukhawuleza njengoko ubushushu buhamba;
- Ukutshintshiselana kwezinto ezisebenzayo kwenzeka phakathi kwezigaba ze-solid kunye ne-gas, nto leyo ekhokelela ekwakhiweni kwesakhiwo sekristale ye-graphite esicwangciswe kakuhle.
III. Ukuphucula Ubushushu Ngeenkqubo Ezikhethekileyo
A. I-Catalytic Graphitization
Ukongezwa kwee-catalysts ezifana ne-iron okanye i-ferrosilicon kunokunciphisa kakhulu amaqondo obushushu e-graphitization ukuya kutsho kwi-1500–2200℃. Umzekelo:
- I-Ferrosilicon catalyst (25% ye-silicon content) inokwehlisa ubushushu ukusuka kwi-2500–3000℃ ukuya kwi-1500℃;
- I-BN catalyst inokunciphisa ubushushu bube ngaphantsi kwama-2200℃ ngelixa iphucula indlela ezijongeka ngayo iifayibha zekhabhoni.
B. Ukwenziwa kweGraphitization yoBushushu obuPhezulu kakhulu
Isetyenziselwa usetyenziso olucocekileyo oluphezulu olufana negrafiti yenyukliya kunye negrafiti yenqwelomoya, le nkqubo isebenzisa ubushushu obuphakathi okanye ubushushu be-plasma arc (umz., amaqondo obushushu e-argon plasma afikelela kwi-15,000℃) ukufikelela kumaqondo obushushu obungaphezulu kwe-3200℃ kwiimveliso;
- Iqondo lokuguqulwa kwegrafu lidlula i-0.99, kwaye umxholo wokungcola uphantsi kakhulu (umxholo wothuthu < 0.01%).
IV. Impembelelo yoBushushu kwiMiphumo yeGraphitization
A. Ukumelana kunye nokuqhuba ubushushu
Kwinqanaba ngalinye le-0.1 lokunyuka kwe-graphitization degree, i-resistivity iyancipha nge-30%, kwaye i-thermal conductivity iyanda nge-25%. Umzekelo, emva konyango kwi-3000℃, i-resistivity ye-graphite inokwehla iye kwi-1/4–1/5 yexabiso layo lokuqala.
B. Iipropati zoomatshini
Amaqondo obushushu aphezulu anciphisa isithuba phakathi kwegrafiti ukuya kwixabiso elifanelekileyo (0.3354 nm), okwandisa kakhulu ukumelana nobushushu kunye nokuzinza kweekhemikhali (ngokunciphisa i-coefficient yokwandiswa okuthe ngqo kwe-50%–80%), ngelixa ekwanika ukuthambisa kunye nokumelana nokuguguleka.
C. Ukuphucula ubunyulu
Kwi-3000℃, iibhondi zeekhemikhali kwi-99.9% yeekhompawundi zendalo ziyaqhekeka, zivumela ukungcola ukuba kukhutshwe kwimo yegesi kwaye oko kukhokelela ekubeni imveliso ibe nobunyulu obuyi-99.9% nangaphezulu.
Ixesha leposi: Sep-11-2025